A Novel Approach to Carrier Temperature Calculation for Semiconductor Device Simulation using Monotone Iterative Method. Part II: Numerical Results
نویسنده
چکیده
In this paper, we apply our proposed computing algorithm for numerical solution of semiconductor device energy balance equation in carrier temperature simulation. This robust simulation based on finite volume discertization scheme and monotone iterative algorithm is successfully developed and implemented for intrinsic investigation of submicron MOSFET device. Simulation results demonstrate MOSFET electron temperature can be significantly controlled with lightly doped drain (LDD) structure. Global convergence behavior is also presented to show the robustness and efficiency of the method. Key-Words: Carrier Temperature Calculation, Monotone Iterative Algorithm, LDD, MOSFET
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A Novel Approach to Carrier Temperature Calculation for Semiconductor Device Simulation using Monotone Iterative Method. Part I: Numerical Algorithm
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